A DC-SQUID WITH INSTRINSICALLY SHUNTED SUB-MICRON JUNCTIONS NEAR THE HYSTERETIC LIMIT EXHIBITING AN EXTREMELY LARGE DV/D-PHI-TRANSFER FUNCTION

被引：8

作者：

HOUWMAN, EP ^{[1
]}

CANTOR, R ^{[1
]}

PETERS, M ^{[1
]}

SCHEER, HJ ^{[1
]}

KOCH, H ^{[1
]}

机构：

[1] INST BERLIN,PHYS TECH BUNDESANSTALT,D-1000 BERLIN 10,FED REP GER

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1989年 / 25卷 / 02期

关键词：

Films--Superconducting - Telecommunication Lines; Strip;

D O I：

10.1109/20.92492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fabrication process yielding submicron-scale Josephson junctions has been developed. The junction consists of two metal striplines lying in line and separated by a vertical barrier. Thus the contact area is determined by the width and thickness of the striplines. The capacitive coupling is only due to the small contact area, because there is no layer overlap. The process was applied to all-Nb thin-film junction technology with nitrided Si barriers. The I-V (current-voltage) curves of these junctions show the characteristic features of SNS (superconductor-normal-superconductor) contacts. DC SQUIDs (superconducting quantum interference devices) made of these junctions exhibit characteristics competitive with those of high-quality tunnel-junction DC SQUIDs.

引用

页码：1147 / 1150

页数：4

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