PACKAGED 2X2 ARRAY OF INGAAS/INP MULTIPLE QUANTUM-WELL MODULATORS GROWN BY DOUBLE-SIDED EPITAXY

被引：5

作者：

REJMANGREENE, MAZ

SCOTT, EG

机构：

[1] British Telecom Research Laboratories, Martlesham Heath

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

Modulation; Semiconductor devices and materials;

D O I：

10.1049/el:19900617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial growth of InGaAs/lnP MQW structures on both sides of an InP substrate is used to enhance the performance of planar optical modulators to 3-8 dB for -10 V change in bias. 2x2 arrays of such devices, operating at l-Sl/mi, are realised by means of a novel packaging scheme. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：946 / 948

页数：3

共 10 条

[1]

BARNES N, UNPUB ELECTRON LETT

[2] 5.5 GHZ MULTIPLE QUANTUM WELL REFLECTION MODULATOR [J].