D-CENTERS IN SPHERICAL QUANTUM DOTS

被引:63
作者
ZHU, JL [1 ]
ZHAO, JH [1 ]
DUAN, WH [1 ]
GU, BL [1 ]
机构
[1] TSING HUA UNIV, DEPT PHYS, BEIJING 100084, PEOPLES R CHINA
关键词
D O I
10.1103/PhysRevB.46.7546
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A negatively charged donor center D- (i.e., a neutral shallow donor D0 that binds a second electron) in a spherical quantum dot is studied by use of a variational approach. A trial function which includes electron-correlation effects and approaches the Chandrasekhar-type function in the limit of zero barrier height is used. The well-radius and barrier-height dependence of the "binding energy" of the D- center is obtained. The dimensional characteristics are clearly demonstrated not only for the "binding energy" and its maximum of the D- center but also for the ratio of D- to D0 "binding energy" and the electron-correlation effect.
引用
收藏
页码:7546 / 7550
页数:5
相关论文
共 30 条
[1]   SPECTROSCOPIC OBSERVATION OF D-, DO AND CYCLOTRON-RESONANCE LINES IN N-GAAS AND N-INP AT INTERMEDIATE AND STRONG MAGNETIC-FIELDS AND UNDER DIFFERENT CONDITIONS OF BIAS, TEMPERATURE AND PRESSURE [J].
ARMISTEAD, CJ ;
NAJDA, SP ;
STRADLING, RA ;
MAAN, JC .
SOLID STATE COMMUNICATIONS, 1985, 53 (12) :1109-1114
[2]   GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].
ASADA, M ;
MIYAMOTO, Y ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921
[3]   ASYMPTOTIC BIEXCITON BINDING-ENERGY IN QUANTUM DOTS [J].
BANYAI, L .
PHYSICAL REVIEW B, 1989, 39 (11) :8022-8024
[4]   HYDROGENIC IMPURITY STATES IN QUANTUM-WELL WIRES [J].
BRYANT, GW .
PHYSICAL REVIEW B, 1984, 29 (12) :6632-6639
[5]   HYDROGENIC IMPURITY STATES IN QUANTUM-WELL WIRES - SHAPE EFFECTS [J].
BRYANT, GW .
PHYSICAL REVIEW B, 1985, 31 (12) :7812-7818
[6]   BIEXCITON BINDING IN QUANTUM BOXES [J].
BRYANT, GW .
PHYSICAL REVIEW B, 1990, 41 (02) :1243-1246
[7]  
Chandrasekhar S, 1944, ASTROPHYS J, V100, P176, DOI 10.1086/144654
[8]  
DAVYDOV AS, 1976, QUANTUM MECHANICS, P158
[9]   NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].
DEAN, PJ ;
HAYNES, JR ;
FLOOD, WF .
PHYSICAL REVIEW, 1967, 161 (03) :711-&
[10]   EFFECTIVE BOND-ORBITAL MODEL FOR ACCEPTOR STATES IN SEMICONDUCTORS AND QUANTUM DOTS [J].
EINEVOLL, GT ;
CHANG, YC .
PHYSICAL REVIEW B, 1989, 40 (14) :9683-9697