TRAPPING OF POSITRONS AT VACANCIES IN MAGNESIUM

被引：54

作者：

HAUTOJARVI, P ^{[1
]}

JOHANSSON, J ^{[1
]}

VEHANEN, A ^{[1
]}

YLIKAUPPILA, J ^{[1
]}

HILLAIRET, J ^{[1
]}

TZANETAKIS, P ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,PHYS SOLIDES SECT,F-38041 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 27卷 / 01期

关键词：

D O I：

10.1007/BF01197546

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：49 / 56

页数：8

共 24 条

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