A PHOTOEMISSION-STUDY OF BARRIER AND TRANSPORT-PROPERTIES OF THE INTERFACES OF AU AND CU WITH WSE2(0001) SURFACES

被引：33

作者：

KLEIN, A ^{[1
]}

PETTENKOFER, C ^{[1
]}

JAEGERMANN, W ^{[1
]}

LUXSTEINER, M ^{[1
]}

BUCHER, E ^{[1
]}

机构：

[1] UNIV KONSTANZ,FB PHYS,D-78434 CONSTANCE,GERMANY

来源：

SURFACE SCIENCE | 1994年 / 321卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)90023-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interface formation of gold and copper with UHV-cleaved WSe2(0001) van der Waals-surfaces has been studied by photoelectron spectroscopy using synchrotron radiation and He I excitation. The metal films were evaporated on samples kept at room temperature and at T=85 K, respectively. No interface reactions have been observed. Metal films show three-dimensional island growth at room temperature and continuous layer growth at 85 K. The Schottky barrier heights are determined to be Phi(Bp) = 0.76 +/- 0.02 eV for Au/- and Phi(Bp) = 1.0 +/- 0.02 eV for Cu/p-WSe2, respectively. Temperature-dependent photovoltages were measured to determine the dominant contributions to the charge transport across the interfaces. For the Au-contact the photovoltages induced by the helium lamp can be calculated assuming simple thermionic emission which allows an independent measurement of the barrier height. The Cu-contacts show a significant reduction of photovoltages which is discussed in terms of interface reactions and diffusion of Cu into the space-charge region. Non-equilibrium characterization with photoelectron spectroscopy is shown to be very useful to optimize the parameters for interface preparation.

引用

页码：19 / 31

页数：13

共 34 条

[1] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].