ELECTRONIC PROPERTIES OF EPITAXIAL-6H SILICON-CARBIDE

被引：15

作者：

WESSELS, BW ^{[1
]}

GATOS, HC ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1977年 / 38卷 / 04期

关键词：

D O I：

10.1016/0022-3697(77)90078-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：345 / 350

页数：6

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