PHOTOLUMINESCENCE OF MG-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING MG3AS2 AS A MG SOURCE - A COMPARISON WITH MG+ ION-IMPLANTATION

被引：21

作者：

MAKITA, Y

TAKEUCHI, Y

OHNISHI, N

NOMURA, T

KUDO, K

TANAKA, H

LEE, HC

MORI, M

MITSUHASHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 18期

关键词：

D O I：

10.1063/1.97628

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1184 / 1186

页数：3

共 16 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].

HEIM, U ;

HIESINGE.P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470

[3]

HOPFIELD JJ, 1964, P INT C PHYS SEMICON, P725

[4] PHOTOLUMINESCENCE SPECTRA OF UNDOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY HIGH AND LOW SUBSTRATE TEMPERATURES [J].

KUDO, K ;

MAKITA, Y ;

TAKAYASU, I ;

NOMURA, T ;

KOBAYASHI, T ;

IZUMI, T ;

MATSUMORI, T .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :888-891

[5]

KUNZEL H, 1981, I PHYS C SER, V56, P519

[6]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[7] NEW EMISSION-LINES IN HIGHLY CARBON ION-IMPLANTED GAAS [J].

MAKITA, Y ;

YOKOTA, M ;

NOMURA, T ;

TANOUE, H ;

TAKAYASU, I ;

KATAOKA, S ;

IZUMI, T ;

MATSUMORI, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :433-437

[8] PHOTOLUMINESCENCE OF VERY DILUTELY C+ ION-IMPLANTED GAAS [J].

MAKITA, Y ;

NOMURA, T ;

YOKOTA, M ;

MATSUMORI, T ;

IZUMI, T ;

TAKEUCHI, Y ;

KUDO, K .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :623-625

[9] SELECTIVE OPTICAL COMPENSATION EFFECT OF 2 NEW NEAR-BAND-EDGE EMISSIONS IN SIMULTANEOUSLY ACCEPTOR (ZN+) AND DONOR (SE+) ION-IMPLANTED GAAS [J].

MAKITA, Y ;

NOMURA, T ;

KUDO, K ;

IRIE, K ;

OHNISHI, N ;

TAKEUCHI, Y ;

TANAKA, H ;

TANOUE, H ;

MITSUHASHI, Y .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :442-444

[10] FORMATION OF RADIATIVE COMPLEX-CENTERS BY DUAL IMPLANTATION OF C+ AND O+ IONS INTO GAAS [J].

MAKITA, Y ;

NOMURA, T ;

YOKOTA, M ;

KUDO, K ;

TAKEUCHI, Y .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :765-769

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