PHOTOINDUCED CHARGE-TRANSFER PROCESS IN PLZT CERAMICS

被引：11

作者：

HOULIER, B ^{[1
]}

MICHERON, F ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.325666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoinduced charge-transfer process in PLZT ceramics is studied by measuring the refractive-index changes during hologram recording at λ=488 nm. From the measured values of the photoinduced space-charge fields, it is concluded that the photocarrier drift lengths are comparable with the fringe spacing (a few μm); the photorefractive sensitivity is limited by the low photoexcitation quantum efficiency (10-4) and is not influenced by oxidoreduction treatments.

引用

页码：343 / 345

页数：3

共 15 条

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