BAND STRUCTURE OF MAGNETIC SEMICONDUCTORS

被引：15

作者：

ADLER, D

FEINLEIB, J

机构：

[1] Department of Electrical Engineering, Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge

[2] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 03期

关键词：

D O I：

10.1063/1.1657783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method is proposed for representing the effective one-electron density-of-states of materials in which some of the valence electrons are extremely localized. If some additional rules regarding nonconducting states and occupation-number dependent states are imposed, this scheme can be used to interpret both the electrical and optical properties of magnetic semiconductors. The materials NiO and CoO are discussed in detail. © 1969 The American Institute of Physics.

引用

页码：1586 / &

共 9 条

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JOURNAL OF APPLIED PHYSICS, 1968, 39 (2P1) :761-&

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