INCREASE IN ISOTOPIC SELECTIVITY WITH PRESSURE IN THE MULTI-PHOTON INFRARED DECOMPOSITION OF CF3BR

被引：33

作者：

GAUTHIER, M

NIP, WS

HACKETT, PA

WILLIS, C

机构：

来源：

CHEMICAL PHYSICS LETTERS | 1980年 / 69卷 / 02期

关键词：

D O I：

10.1016/0009-2614(80)85083-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：372 / 374

页数：3

共 15 条

[1] CARBON ISOTOPE SEPARATION BY MULTIPHOTON DISSOCIATION OF CF3I [J].

BITTENSON, S ;

HOUSTON, PL .

JOURNAL OF CHEMICAL PHYSICS, 1977, 67 (11) :4819-4824

[2] ENRICHMENT OF C-13 IN PRODUCTS OF MULTI-PHOTON DISSOCIATION OF CF3X COMPOUNDS [J].

DROUIN, M ;

GAUTHIER, M ;

PILON, R ;

HACKETT, PA ;

WILLIS, C .

CHEMICAL PHYSICS LETTERS, 1978, 60 (01) :16-18

[3] ISOTOPICALLY SELECTIVE MULTI-PHOTON DECOMPOSITION OF CF3BR AND CF3I - SEPARATION OF SELECTIVE AND NON-SELECTIVE PRODUCT SOURCES [J].

GAUTHIER, M ;

HACKETT, PA ;

WILLIS, C .

CHEMICAL PHYSICS, 1980, 45 (01) :39-46

[4] C-13 ENRICHMENT IN ROOM-TEMPERATURE MULTI-PHOTON DECOMPOSITION OF CF3BR [J].

GAUTHIER, M ;

HACKETT, PA ;

DROUIN, M ;

PILON, R ;

WILLIS, C .

CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1978, 56 (16) :2227-2228

[5]

GAUTHIER M, UNPUBLISHED

[6] SELECTIVE DECOMPOSITION OF CF3(COCF3)-C-13 MOLECULES AT NATURAL ABUNDANCE - MULTI-PHOTON DISSOCIATION AT THRESHOLD [J].

HACKETT, PA ;

GAUTHIER, M ;

WILLIS, C ;

PILON, R .

JOURNAL OF CHEMICAL PHYSICS, 1979, 71 (01) :546-548

[7] MECHANISMS OF MULTI-PHOTON DISSOCIATION OF CF3COCF3 [J].

HACKETT, PA ;

GAUTHIER, M ;

WILLIS, C .

JOURNAL OF CHEMICAL PHYSICS, 1978, 69 (06) :2924-2925

[8]

HACKETT PA, UNPUBLISHED

[9] MULTIPLE-PHOTON ISOTOPE SEPARATION IN SF6 - EFFECT OF LASER-PULSE SHAPE AND ENERGY, PRESSURE, AND IRRADIATION GEOMETRY [J].

LYMAN, JL ;

ROCKWOOD, SD ;

FREUND, SM .

JOURNAL OF CHEMICAL PHYSICS, 1977, 67 (10) :4545-4556

[10] DEUTERIUM SEPARATION WITH 1400-FOLD SINGLE-STEP ISOTOPIC ENRICHMENT AND HIGH-YIELD BY CO-2-LASER MULTIPLE-PHOTON DISSOCIATION OF 2,2-DICHLORO-1,1,1-TRIFLUOROETHANE [J].

MARLING, JB ;

HERMAN, IP .

APPLIED PHYSICS LETTERS, 1979, 34 (07) :439-442

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