PARAMAGNETIC NITROGEN IN CHEMICAL VAPOR-DEPOSITION DIAMOND THIN-FILMS

被引：22

作者：

HOINKIS, M

WEBER, ER

LANDSTRASS, MI

PLANO, MA

HAN, S

KANIA, DR

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[2] CRYSTALLUME,MENLO PK,CA 94025

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 15期

关键词：

D O I：

10.1063/1.106172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron-paramagnetic-resonance (EPR) studies demonstrate the presence of nitrogen point defects in microwave-assisted chemical vapor deposition (CVD) diamond thin films. Polycrystalline powder pattern EPR spectra are interpreted with g = 2.0023, A parallel-to = 114.0 MHz, and A perpendicular-to = 81.3 MHz. These spin parameters are identical to those of nitrogen in single crystal natural diamonds. Quantitative EPR and secondary ion-mass spectrometry (SIMS) results of CVD diamond thin films suggest that nitrogen point defect formation is favored over aggregate nitrogen formation.

引用

页码：1870 / 1872

页数：3

共 12 条

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