GROWTH AND ELECTRICAL-PROPERTIES OF EPITAXIAL CUINS2 THIN-FILMS ON GAAS SUBSTRATES

被引：19

作者：

NEUMANN, H ^{[1
]}

SCHUMANN, B ^{[1
]}

PETERS, D ^{[1
]}

TEMPEL, A ^{[1
]}

KUHN, G ^{[1
]}

机构：

[1] KARL MARX UNIV,FACHBEREICH KRISTALLOG,SEKT CHEM,DDR-703 LEIPZIG,GER DEM REP

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1979年 / 14卷 / 04期

关键词：

D O I：

10.1002/crat.19790140403

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CuInS2 thin films with thicknesses in the range of 500 Å were deposited onto semi‐insulating (111) A‐oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 … 870 K. Epitaxial growth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 870 K. Films grown at Tsub ≦ 800 K showed n‐type conductivity whereas at growth temperatures Tsub ≧ 850 K the films were always p‐type conducting. A donor level and an acceptor level with ionization energies of 0.24 eV and 0.22 eV, respectively, were found from an analysis of the electrical measurements. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：379 / 388

页数：10

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