CALCULATION OF CHANNELING EFFECTS IN ION-IMPLANTATION

Channeling effects during ion implantation in silicon are calculated in this work by using a modified version of the TRIM Monte Carlo code. As the direction of motion of each ion is known during its movement inside the target, an ion can be considered to enter into a channel when its direction of motion is aligned with a channel axis within a critical angle. Simple models are used for ion motion and stopping along channels. Range distributions including channeling effects are obtained with a shorter computation time than with amorphous TRIM calculations. Good agreement is obtained with experimental profiles implanted at low energies into tilted silicon.