STATIC CONDUCTIVITY OF A HEAVILY DOPED SEMICONDUCTOR

被引：10

作者：

ARBUZOV, YD

EVDOKIMOV, VM

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 92卷 / 02期

关键词：

D O I：

10.1002/pssb.2220920230

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that the static conductivity of a heavily doped semiconductor may be obtained in terms of a transport relaxation time. Not only the term of Born's approximation is regained in the framework of the assumptions made but as well the terms associated with the scattering by two impurities are taken into account. The relevant correction to the static conductivity is calculated. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：579 / 583

页数：5

共 6 条

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