COMPETITION BETWEEN MAGNETIC-FIELD-INDUCED AND ELECTRIC-FIELD-INDUCED LOCALIZATIONS IN GAAS/GA0.65AL0.35AS SUPERLATTICES

被引:14
作者
ALEXANDROU, A
DIGNAM, MM
MENDEZ, EE
SIPE, JE
HONG, JM
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
[2] UNIV TORONTO,ONTARIO LASER & LIGHTWAVE RES CTR,TORONTO M5S 1A7,ONTARIO,CANADA
[3] UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 23期
关键词
D O I
10.1103/PhysRevB.44.13124
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have observed that an in-plane magnetic field applied perpendicular to an electric field along the growth axis of GaAs/Ga0.65Al0.35As superlattices causes the interband Stark transitions seen in photocurrent spectra to lose intensity and eventually to disappear. For sufficiently high magnetic fields, however, new transitions appear, which we interpret as transitions of magnetic origin. A calculation of the interband transitions that includes excitonic effects gives good agreement with the measured energies and intensities and shows that these results are due to a competition between magnetic-field- and electric-field-induced localizations.
引用
收藏
页码:13124 / 13127
页数:4
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