CHROMIUM AND TELLURIUM REDISTRIBUTION IN GAAS AND AL0.3GA0.7AS GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

MORKOC, H

HOPKINS, C

EVANS, CA

CHO, AY

机构：

[1] CHARLES EVANS & ASSOC,SAN MATEO,CA 94402

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.327519

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5986 / 5991

页数：6

共 18 条

[1] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J].

BARNES, PA ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :651-653

[2] RECTIFICATION AT N-N GAAS - (GA, AL)AS HETEROJUNCTIONS [J].

CHANDRA, A ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1979, 15 (03) :90-91

[3]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[5] THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].

CRONIN, GR ;

HAISTY, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :874-877

[6]

DAY DR, UNPUBLISHED

[7] SUBSTRATE CURRENT IN GAAS-MESFETS [J].

EASTMAN, LF ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1359-1361

[8]

EVANS CD, UNPUBLISHED

[9]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[10]

KOCOT K, 1979, PHYS REV B, V18, P2059

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