HIGH-POWER HIGH-EFFICIENCY OPERATION OF READ-TYPE IMPATT-DIODE OSCILLATORS

被引：21

作者：

KIM, C

STEELE, R

BIERIG, R

机构：

[1] RAYTHEON CO,SPECIAL MICROWAVE DEVICES OPERATION,WALTHAM,MA 02154

[2] RAYTHEON CO,RES DIV,WALTHAM,MA 02154

来源：

关键词：

D O I：

10.1049/el:19730128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：173 / 174

页数：2

共 10 条

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KIM, C
ARMSTRON.LD
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 270 - &
[3] KIM C, 1973, 1973 WORKSH COMP SEM
[4] GAAS SCHOTTKY-BARRIER AVALANCHE DIODES
KIM, CK
ARMSTRON.LD
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (01) : 53 - &
[5] KRAMER B, 1972, IEEE GMTT INT MICROW
[6] READ WTJ, 1958, BELL SYST TECH J, V27, P401
[7] THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY
SALMER, G
PRIBETICH, J
FARRAYRE, A
KRAMER, B
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 314 - 324
[8] SWARTZ GA, 1973, P IEEE INT SOLID STA, P198
[9] SWARTZ GA, 1973, P IEEE INT SOLID STA, P46
[10] SWARTZ GA, 1973, P IEEE INT SOLID STA, P47