491-NM ZNCESE/ZNSE/ZNMGSSE SCH LASER-DIODE WITH A LOW OPERATING VOLTAGE

被引：30

作者：

ITOH, S

NAKAYAMA, N

OHATA, T

OZAWA, M

OKUYAMA, H

NAKANO, K

ISHIBASHI, A

IKEDA, M

MORI, Y

机构：

[1] Sony Corppration Research Center

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 10B期

关键词：

SEMICONDUCTOR LASERS; II-VI; ZNMGSSE; SCH;

D O I：

10.1143/JJAP.32.L1530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature pulsed operation of ZnCdSe/ZnSe/ZnMgSSe separate-confinement heterostructure lasers has been achieved at a wavelength of 491 nm, which is the shortest wavelength at room temperature ever reported. The laser structure was made by molecular beam epitaxy on n-GaAs substrate. The operating current density was 3.8 kA/cm2 for a diode with a 720 mum long and 10 mum wide stripe. An operating voltage of 9 V has been obtained at the threshold current using improved contact layers and ohmic metals.

引用

收藏

页码：L1530 / L1532

页数：3

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