ENHANCED MAGNETORESISTANCE IN AS-DEPOSITED OXYGEN-DEFICIENT LA0.6PB0.4MNO3-Y THIN-FILMS

被引：41

作者：

SATYALAKSHMI, KM

MANOHARAN, SS

HEGDE, MS

PRASAD, V

SUBRAMANYAM, SV

机构：

[1] INDIAN INST SCI,SOLID STATE & STRUCT CHEM UNIT,BANGALORE 560012,KARNATAKA,INDIA

[2] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 11期

关键词：

D O I：

10.1063/1.360727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 degrees C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator-metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator-metal transition temperature against the 40% GMR in the case of stoichiometric thin films. (C) 1995 American Institute of Physics.

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页码：6861 / 6863

页数：3

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