CHARACTERISTICS OF ISOTYPE N GE-N GAAS HETEROJUNCTIONS

[1] GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 283 - 287

[2] FIXED-INTERFACE-CHARGE MODEL FOR ISOTYPE HETEROJUNCTIONS [J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (03): : 91 - 93

[3] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +

[4] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2642 - 2652

[5] SMALL SIGNAL EQUIVALENT CIRCUIT OF AN ISOTYPE HETEROJUNCTION DOMINATED BY TRAPS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (01) : 41 - &

[6] KUVAS RL, 1977, 6TH P BIENN CORN EL, P247

[7] NAMORDI MR, 1979, IEEE T ELECTRON DEV, V26, P1074, DOI 10.1109/T-ED.1979.19548

[8] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[9] CURRENT-VOLTAGE CHARACTERISTICS AND CAPACITANCE OF ISOTYPE HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 401 - +

[1] GERMANIUM-GALLIUM ARSENIDE HETEROJUNCTIONS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 283 - 287

[2] FIXED-INTERFACE-CHARGE MODEL FOR ISOTYPE HETEROJUNCTIONS [J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (03): : 91 - 93

[3] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +

[4] THEORY OF ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION [J]. PHYSICAL REVIEW B, 1977, 16 (06): : 2642 - 2652

[5] SMALL SIGNAL EQUIVALENT CIRCUIT OF AN ISOTYPE HETEROJUNCTION DOMINATED BY TRAPS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (01) : 41 - &

[6] KUVAS RL, 1977, 6TH P BIENN CORN EL, P247

[7] NAMORDI MR, 1979, IEEE T ELECTRON DEV, V26, P1074, DOI 10.1109/T-ED.1979.19548

[8] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165

[9] CURRENT-VOLTAGE CHARACTERISTICS AND CAPACITANCE OF ISOTYPE HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 401 - +