REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAAS (111)A

被引：34

作者：

FAHY, MR ^{[1
]}

SATO, K ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] NIKKO KYODO CO LTD,MINATO KU,TOKYO,TOKYO 105,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have made a study of reflection high-energy electron diffraction intensity oscillations during the growth of GaAs on singular GaAs (111)A substrates by molecular beam epitaxy. The behavior is quite different from growth of GaAs on (001) orientated substrates in that the oscillation period is growth temperature and AS(4):Ga flux ratio dependent. We speculate that this is due to the (110)-like configuration of the (111)A 2x2 reconstructed surface, which requires direct interaction of a Ga and an As atom for growth to occur.

引用

页码：190 / 192

页数：3

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