MICROWAVE-RADIATION INDUCED INSTABILITY IN PHOTOEXCITED UNDOPED GAAS

被引:2
作者
ASHKINADZE, BM [1 ]
COHEN, E [1 ]
RON, A [1 ]
PFEIFFER, LN [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1088/0268-1242/9/5S/046
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The photoinduced microwave absorption in undoped bulk GaAs crystals is studied at low temperatures. It is observed that when the microwave power and exciting light intensity exceed certain threshold values, self-oscillations appear in the microwave absorption. The oscillation frequency is dependent on the light intensity and also on the external magnetic field. This phenomenon is qualitatively explained in terms of impact ionization of shallow donors that are neutralized by the photoexcitation.
引用
收藏
页码:570 / 572
页数:3
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