ENHANCED DIFFUSION OF ION IMPLANTED SB IN SILICON

[1] Boltaks B.I., 1963, DIFFUSION SEMICONDUC

[2] BUSEN KM, 1966, T METALL SOC AIME, V236, P306

[3] GAMO K, 1 P C SOL STAT DEV

[4] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +

[5] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[6] ION BOMBARDMENT OF SILICON IN A GLOW DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2405 - &

[1] Boltaks B.I., 1963, DIFFUSION SEMICONDUC

[2] BUSEN KM, 1966, T METALL SOC AIME, V236, P306

[3] GAMO K, 1 P C SOL STAT DEV

[4] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +

[5] Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[6] ION BOMBARDMENT OF SILICON IN A GLOW DISCHARGE [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2405 - &