Photomagnetoelectric (PME) and photoconductive (PC) effects in As-doped Si (Nd=1.4×1016 cm-3) have been investigated as functions of temperature (7.9°K-27°K), photoinjection, and magnetic-field strength (0-8000 G). The high-injection electron lifetime (n0, ambipolar diffusion length, ambipolar diffusivity, and effective carrier mobility are deduced from the experimental data on the PME open-circuit voltage, photoconductance, and the Hall coefficient. The Shockley-Read model is used to interpret the recombination and trapping mechanism involved. It is found that the defect density in this sample is approximately equal to 5.6×1012 cm-3, and the defect level is believed to be acceptor-type and located in the lower half of the band gap. The electron-capture cross section is found equal to 6.5×10-15 cm-3 at 20°K and 2.18×10-15 cm-3 at 24°K. The experimental results for VPME, IS, and G versus magnetic field are found in good agreement with theory for T>~20°K and for the high-injection region. Deviations of the results from theory at high magnetic fields are observed for T<~14°K and for the moderate-injection region. © 1969 The American Physical Society.
