DYNAMICS OF PHOTOEXCITED GAAS BAND-EDGE ABSORPTION WITH SUBPICOSECOND RESOLUTION

被引：278

作者：

SHANK, CV

FORK, RL

LEHENY, RF

SHAH, J

机构：

[1] Bell Telephone Laboratories, Holmdel

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.42.112

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Time-resolved measurements of optically induced changes in the near-band-gap transmission spectrum of GaAs at 80A°K, following excitation with an ultrashort laser pulse, provide a means of directly monitoring the hot-carrier distribution as it cools to the lattice temperature with a time constant of 4 psec. Exciton screening and band-gap renormalization are observed to occur in less than 0.5 psec. © 1979 The American Physical Society.

引用

页码：112 / 115

页数：4

共 12 条

[1] PICOSECOND SPECTROSCOPY OF SEMICONDUCTORS
AUSTON, DH
MCAFEE, S
SHANK, CV
IPPEN, EP
TESCHKE, O
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 147 - 150
[2] AUSTON DH, 1977, TOPICS APPLIED PHYSI, V18
[3] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS
BRINKMAN, WF
RICE, TM
[J]. PHYSICAL REVIEW B, 1973, 7 (04): : 1508 - 1523
[4] DOW JD, 1974, 12TH P INT C PHYS SE, P957
[5] SCREENING OF EXCITONS IN SEMICONDUCTORS
GAY, JG
[J]. PHYSICAL REVIEW B, 1971, 4 (08): : 2567 - &
[6] IPPEN EP, 1977, TOP APPL PHYS, V18, P83
[7] SEEGER K, 1973, ELECT MAT, pCH5
[8] SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2
[9] LOW-TEMPERATURE ABSORPTION-SPECTRUM IN GAAS IN PRESENCE OF OPTICAL-PUMPING
SHAH, J
LEHENY, RF
WIEGMANN, W
[J]. PHYSICAL REVIEW B, 1977, 16 (04): : 1577 - 1580
[10] SHANK CV, UNPUBLISHED

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