THEORY OF THE RESONANT AND NON-RESONANT PHOTOCONDUCTIVITY CHANGES IN AMORPHOUS-SILICON

被引：20

作者：

MOVAGHAR, B

RIES, B

SCHWEITZER, L

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 41卷 / 02期

关键词：

D O I：

10.1080/13642818008245377

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：159 / 167

页数：9

共 12 条

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[J]. PHYSICAL REVIEW B, 1972, 6 (02): : 436 - &
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[6] Merrifield R.E., 1971, PURE APPL CHEM, V27, P481, DOI [10.1351/pac197127030481, DOI 10.1351/PAC197127030481]
[7] OPTICALLY DETECTED ELECTRON-SPIN RESONANCE IN AMORPHOUS SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 981 - 985
[8] ESR AND CONDUCTIVITY IN AMORPHOUS-GERMANIUM AND SILICON
MOVAGHAR, B
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (02): : 491 - 498
[9] MOVAGHAR B, 1978, J PHYS C SOLID STATE, V11, P125, DOI 10.1088/0022-3719/11/1/023
[10] THEORY OF THE RESONANT AND NON-RESONANT LUMINESCENCE CHANGES IN AMORPHOUS-SILICON
MOVAGHAR, B
RIES, B
SCHWEITZER, L
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (02): : 141 - 157