TIME RESOLVED PHOTO-LUMINESCENCE NEAR THE BAND-GAP IN AMORPHOUS SILICON

被引：41

作者：

KURITA, S

CZAJA, W

KINMOND, S

机构：

[1] ECOLE POLYTECH FED LAUSANNE,PHYS APPL LAB,CH-1007 LAUSANNE,SWITZERLAND

[2] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 10期

关键词：

D O I：

10.1016/0038-1098(79)90491-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two broad luminescence bands in weakly hydrogenated (glow discharge) undoped amorphous silicon have been observed using time resolved spectroscopy on a nanosecond timescale. Whereas the luminescence decay of the low energy band has been found to be sample independent, the peak position of the luminescence does show a sample dependence. We propose an intrinsic origin of this luminescence. © 1979.

引用

页码：879 / 883

页数：5

共 20 条

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[10] OPTICALLY DETECTED ELECTRON-SPIN RESONANCE IN AMORPHOUS SILICON
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NITTA, S
SHIMAKAWA, K
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (12) : 981 - 985

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