EPITAXIAL-GROWTH OF ULTRATHIN AL2O3 FILMS ON TA(110)

被引:111
作者
CHEN, PJ [1 ]
GOODMAN, DW [1 ]
机构
[1] TEXAS A&M UNIV,DEPT CHEM,COLLEGE STN,TX 77843
关键词
D O I
10.1016/0039-6028(94)90719-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Heteroepitaxial growth of ultrathin (5-40 angstrom) aluminum oxide films was successfully carried out on a Ta(110) substrate between 700 and 900 K by means of vacuum reactive deposition. Low-energy electron diffraction (LEED) indicated the formation of a long-range ordered epitaxial Al2O3 film with a slightly distorted (beta = 117.9) hexagonal lattice corresponding to close-packing of oxygen (O2-) anions. The epitaxial overlayer was found to exhibit a Kurdjumov-Sachs (KS) type orientational relationship with respect to the Ta(110) substrate with approximately 4.2-degrees rotational mismatch.
引用
收藏
页码:L767 / L773
页数:7
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