EPITAXY-INDUCED PHASE OF NEAR-STOICHIOMETRY PBTIO3 FILMS PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：21

作者：

BAI, GR ^{[1
]}

CHANG, HLM ^{[1
]}

KIM, HK ^{[1
]}

FOSTER, CM ^{[1
]}

LAM, DJ ^{[1
]}

机构：

[1] PUSAN NATL UNIV,DEPT PHYS,PUSAN,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.107897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric PbTiO3 thin films have been prepared by a low-pressure MOCVD process. Epitaxial films with a crystal structure of a bulk equilibrium tetragonal phase were readily obtained within a range of growth conditions. However, by providing excess Pb in the growth process, we have observed an epitaxy-induced phase for near-stoichiometry PbTiO3 which possesses a perovskite-like, but possible, orthorhombic structure.

引用

页码：408 / 410

页数：3