ANALYSIS OF RESIDUAL-STRESS IN 6H-SIC PARTICLES WITHIN AL2O3/SIC COMPOSITES THROUGH RAMAN-SPECTROSCOPY

被引:44
作者
DIGREGORIO, JF
FURTAK, TE
机构
[1] Physics Department, Colorado School of Mines, Golden, Colorado
关键词
STRESS; RAMAN SPECTROSCOPY; CERAMICS; COMPOSITES; SILICON CARBIDE;
D O I
10.1111/j.1151-2916.1992.tb07207.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We measured the Raman spectrum associated with the E2-TO(quasi) and LO(quasi) modes of 6H-SiC particles as a function of hydrostatic pressure using a diamond anvil cell. The results of this calibration experiment were used to analyze the residual stress in 6H-SiC particles within Al2O3/SiC composites with 12%, 20%, and 30% SiC by volume. The Raman spectra show that residual stress in the SiC near the surface of the composites is -2040 +/- 120, -1841 +/- 110, and -1615 +/- 100 MPa for the 12%, 20%, and 30% SiC composites, respectively. The measured decrease in stress with increasing packing fraction is consistent with theoretical predictions based on micromechanics.
引用
收藏
页码:1854 / 1857
页数:4
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