PRESSURE EFFECTS ON THE RESISTIVITY OF TMS

被引：14

作者：

LAPIERRE, F ^{[1
]}

HAEN, P ^{[1
]}

COQBLIN, B ^{[1
]}

RIBAULT, M ^{[1
]}

HOLTZBERG, F ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICA B & C | 1981年 / 108卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(81)90974-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1351 / 1352

页数：2

共 10 条

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[7] MAGNETIC-ORDERING PHENOMENA IN TMS [J].

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[8]

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[9]

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[10] ELECTRONIC-TRANSITION IN CEAL2 UNDER PRESSURE [J].

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