HIGH PHOTOVOLTAGES IN SILICON + SILICON CARBIDE FILMS + THEIR ORIGIN FROM TRAP-INDUCED SPACE CHARGE

被引：27

作者：

BRANDHORST, HW

POTTER, AE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.1702783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1997 / &

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