INSITU LASER-LIGHT SCATTERING .1. DETECTION OF DEFECTS FORMED DURING SILICON MOLECULAR-BEAM EPITAXY

被引：29

作者：

PIDDUCK, AJ

ROBBINS, DJ

CULLIS, AG

GASSON, DB

GLASPER, JL

机构：

[1] Royal Signals and Radar, Establishment, United Kingdom

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 10期

关键词：

19;

D O I：

10.1149/1.2096405

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3083 / 3088

页数：6

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KUBIAK RAA, 1985, SILICON MOL BEAM EPI

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