2 DISTINCT CLASSES OF TUNNELING STATES IN CN--DOPED KBR

被引:13
作者
ENSS, C
SCHWOERER, H
ARNDT, D
VONSCHICKFUS, M
WEISS, G
机构
[1] Institut für Angewandte Physik, Universität Heidelberg, Heidelberg, 69120
来源
EUROPHYSICS LETTERS | 1994年 / 26卷 / 04期
关键词
D O I
10.1209/0295-5075/26/4/009
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have investigated the low-temperature behaviour of the dielectric constant of the mixed crystal (KBr)1-x(KCN)x for x = 0.01 and x = 0.001. The experiments were performed at microwave frequencies between 150 and 1227 MHz in the temperature range from 0.015 K to 10 K. Our experiments prove the existence of tunnelling states with a very small and narrowly distributed energy splitting near E/k(B) = 10 mK for x = 0.001. E increases with CN- concentration and reaches E/k(B) = 40 mK for x = 0.01. These states occur in addition to those at 1 K, well known from thermal experiments.
引用
收藏
页码:289 / 294
页数:6
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