NEW HIGH-PRESSURE PHASE OF GAASO4 - IMPLICATIONS FOR SHAPE-MEMORY MATERIALS

被引：12

作者：

CLARK, SM

CHRISTY, AG

JONES, R

CHEN, J

THOMAS, JM

GREAVES, GN

机构：

[1] UNIV KEELE, DEPT CHEM, KEELE ST5 5BG, STAFFS, ENGLAND

[2] UCL ROYAL INST GREAT BRITAIN, LONDON W1X 4BS, ENGLAND

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.51.38

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of pressure on the crystal structure of GaAsO4 has been studied using energy-dispersive powder diffraction up to 19.7 GPa. A structural phase transition was observed between 6.3 and 9.5 GPa from the ambient hexagonal structure to a triclinic structure. A model for this new high-pressure phase is presented. The low- and high-pressure phases were found to have bulk moduli of 17.6 and 177.0 GPa, respectively. The phase transition is reversible and first order with a volume discontinuity of 8%. The implications for the related shape-memory materials are discussed. © 1995 The American Physical Society.

引用

页码：38 / 44

页数：7

共 23 条

[1] PRESSURE-INDUCED AMORPHIZATION, ELASTIC INSTABILITY, AND SOFT MODES IN ALPHA-QUARTZ [J].