MIRROR TEMPERATURE OF A SEMICONDUCTOR DIODE-LASER STUDIED WITH A PHOTOTHERMAL DEFLECTION METHOD

被引：22

作者：

BERTOLOTTI, M

LIAKHOU, G

LIVOTI, R

WANG, RP

SIBILIA, C

YAKOVLEV, VP

机构：

[1] TECH UNIV,MOLDOVA KISHINEV,KISHINEV 277012,MOLDOVA

[2] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 12期

关键词：

D O I：

10.1063/1.355019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mirror temperature response of a diode laser to injection current is studied through the photodeflection method. A theoretical model is presented together with some experimental measurements. Theoretical results are compared with experimental measurements for an AlGaAs quantum well laser diode.

引用

收藏

页码：7054 / 7060

页数：7

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