STUDY OF SOLID-PHASE REACTIONS OF METALS ON GAAS WITH A TIN DIFFUSION BARRIER

被引：11

作者：

LIEW, BK

TANDON, JL

NICOLET, MA

机构：

[1] CALTECH,PASADENA,CA 91125

[2] APPL SOLAR ENERGY CORP,CITY IND,CA 91749

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 06期

关键词：

D O I：

10.1016/0038-1101(87)90214-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：571 / 578

页数：8

共 25 条

[1] SCHOTTKY BARRIERS ON ORDERED AND DISORDERED SURFACES OF GAAS(110) [J].

AMITH, A ;

MARK, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1344-1352

[2] BARRIER HEIGHT AND LEAKAGE REDUCTION IN N-GAAS-PLATINUM GROUP METAL SCHOTTKY BARRIERS UPON EXPOSURE TO HYDROGEN [J].

ASPNES, DE ;

HELLER, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :602-607

[3]

Baglin J. E. E., 1984, Ion implantation and beam processing, P357

[4] ALLOYED OHMIC CONTACTS TO GAAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807

[5] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[6]

Davey J. E., 1981, Reliability and degradation. Semiconductor devices and circuits, P237

[7]

ECKHARDT G, 1980, LASER ELECTRON BEAM, P467

[8]

FONTAINE C, 1983, J APPL PHYS, V54, P104

[9] PD-GE CONTACTS TO N-TYPE GAAS [J].

GRINOLDS, HR ;

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :973-&

[10] A COMPARISON OF PD SCHOTTKY CONTACTS ON INP, GAAS AND SI [J].

HOKELEK, E ;

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1981, 24 (02) :99-103

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