SCHOTTKY-LIMIT BARRIER HEIGHTS FOR CO-COATED METAL-CLUSTERS ON GAAS(110)

被引：8

作者：

KOMEDA, T

STEPNIAK, F

WEAVER, JH

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 24期

关键词：

D O I：

10.1063/1.104743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter discusses band bending induced by the deposition of metal clusters coated with CO onto GaAs(110). The layer of CO between the metallic clusters and the undisrupted semiconductor simulates a metal-insulator-semiconductor junction. The observed barrier height shows Schottky-limit-like dependence on the work function of the metal.

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页码：2809 / 2811

页数：3

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