ELECTRICAL AND OPTICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER ON A CLEAVED SURFACE OF THE LAYERED SEMICONDUCTOR INSE

被引：54

作者：

HASEGAWA, Y

ABE, Y

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来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 02期

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D O I：

10.1002/pssa.2210700230

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T [工业技术];

学科分类号：

08 ;

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页码：615 / 621

页数：7

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