REFRACTIVE-INDEX OF GA1-XINXAS PREPARED BY VAPOR-PHASE EPITAXY

被引:51
作者
TAKAGI, T
机构
关键词
D O I
10.1143/JJAP.17.1813
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1813 / 1817
页数:5
相关论文
共 13 条
[1]   REFRACTIVE-INDEX OF GA1-XALXAS [J].
AFROMOWITZ, MA .
SOLID STATE COMMUNICATIONS, 1974, 15 (01) :59-63
[2]   E(O) DIELECTRIC-CONSTANT OF GA(1-X)ALXSB [J].
ANCE, C ;
VANMAU, AN .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (08) :1565-1570
[3]   REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV [J].
CASEY, HC ;
SELL, DD ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1974, 24 (02) :63-65
[4]   OPTICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE [J].
CLARK, GD ;
HOLONYAK, N .
PHYSICAL REVIEW, 1967, 156 (03) :913-+
[5]   REFRACTIVE INDEX OF GAAS [J].
MARPLE, DTF .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1241-&
[6]   GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INXGA1-XAS [J].
NAHORY, RE ;
POLLACK, MA ;
DEWINTER, JC .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :775-782
[7]   CONCENTRATION-DEPENDENCE OF REFRACTIVE-INDEX FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.2 AND 1.8 EV [J].
SELL, DD ;
CASEY, HC ;
WECHT, KW .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2650-2657
[8]  
SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P499
[9]   DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J].
SPITZER, WG ;
FAN, HY .
PHYSICAL REVIEW, 1957, 106 (05) :882-890
[10]   VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GA1-YINYAS1-XPX QUATERNARY ALLOYS [J].
SUGIYAMA, K ;
KOJIMA, H ;
ENDA, H ;
SHIBATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) :2197-2203