DEEP LEVELS IN SCANNED ELECTRON-BEAM ANNEALED SILICON

被引：20

作者：

JOHNSON, NM ^{[1
]}

REGOLINI, JL ^{[1
]}

BARTELINK, DJ ^{[1
]}

GIBBONS, JF ^{[1
]}

RATNAKUMAR, KN ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1063/1.91525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：425 / 428

页数：4

共 14 条

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[3] CONSTANT-CAPACITANCE DLTS MEASUREMENT OF DEFECT-DENSITY PROFILES IN SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4828 - 4833
[4] JOHNSON NM, LASER ELECTRON BEAM
[5] JOHNSON NM, 1979, AIP C P, V50, P550
[6] Kimerling L. C., 1977, International Conference on Radiation Effects in Semiconductors, P221
[7] Kimerling L. C., 1979, International Conference on Defects and Radiation Effects in Semiconductors, P273
[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
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[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[9] ENHANCED DIFFUSION IN SI AND GE BY LIGHT ION IMPLANTATION
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[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3468 - &
[10] RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170