BREAKDOWN WALKOUT IN ALGAAS GAAS HEMTS

被引：36

作者：

CHAO, PC ^{[1
]}

SHUR, M ^{[1
]}

KAO, MY ^{[1
]}

LEE, BR ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 03期

关键词：

D O I：

10.1109/16.123504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have observed that the gate breakdown voltage of an unpassivated AlGaAs/GaAs HEMT can move to higher negative values when a current is allowed to flow through the gate under reverse gate bias voltage. When a reverse bias is applied between the gate and source, this breakdown "walkout" can be accompanied by a permanent increase in device source resistance and decreases in transconductance and drain saturation current. We have observed a similar effect in AlGaAs/InGaAs/GaAs pseudomorphic HEMT's and in GaAs MESFET's. This effect was not observed in silicon nitride passivated devices.

引用

页码：738 / 740

页数：3