HETEROEPITAXIAL GROWTH OF GAN1-XPX (X-LESS-THAN-OR-EQUAL-TO-0.09) ON SAPPHIRE SUBSTRATES

被引：20

作者：

IGARASHI, O

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12A期

关键词：

HETEROEPITAXIAL GROWTH; GAN(1-X)P(X); X-LESS-THAN-OR-EQUAL-TO-0.09; EPMA; ICP-AES; VAPOR PHASE REACTION;

D O I：

10.1143/JJAP.31.3791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium nitride phosphide single crystals having the maximum composition of x is similar to 0.09 were epitaxially deposited on (0001) sapphire substrates. The growth was carried out by the vapor phase reaction of the Ga-Br2-PH3-NH3-N2 system. The above maximum composition was attained at a substrate temperature of 980-degrees-C.

引用

页码：3791 / 3793

页数：3