THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT

被引：1296

作者：

GLASSBRENNER, CJ

SLACK, GA

机构：

来源：

PHYSICAL REVIEW | 1964年 / 134卷 / 4A期

关键词：

D O I：

10.1103/PhysRev.134.A1058

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1058 / +

共 67 条

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