ELECTRON TRANSMISSION PROBABILITIES THROUGH GAAS-STRAINED GAASP-GAAS(100) HETEROSTRUCTURES

被引：7

作者：

OSBOURN, GC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：592 / 595

页数：4

共 16 条

[1]

BLAKESLEE AE, 1980, JUN EL MAT C

[2] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].

CAMPHAUSEN, DL ;

CONNELL, GAN ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+

[3] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].

CHANDRASEKHAR, M ;

POLLAK, FH .

PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144

[4] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[5] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[6] GAAS-GAP HETEROJUNCTIONS [J].

DAVIS, ME ;

ZEIDENBERGS, G ;

ANDERSON, RL .

PHYSICA STATUS SOLIDI, 1969, 34 (01) :385-+

[7] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225

[8] DEFORMATION POTENTIALS OF THE DIRECT AND INDIRECT ABSORPTION EDGES OF GAP [J].

MATHIEU, H ;

MERLE, P ;

AMEZIANE, EL ;

ARCHILLA, B ;

CAMASSEL, J ;

POIBLAUD, G .

PHYSICAL REVIEW B, 1979, 19 (04) :2209-2223

[9] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[10] ALMOST PERFECT EPITAXIAL MULTILAYERS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :989-991

← 1 2 →