RESISTIVITY STUDIES OF SINGLE-CRYSTAL AND POLYCRYSTAL FILMS OF ALUMINUM

被引:27
作者
VONBASSEWITZ, A
MITCHELL, EN
机构
[1] University of North Carolina at Chapel Hill, Chapel Hill
来源
PHYSICAL REVIEW | 1969年 / 182卷 / 03期
关键词
D O I
10.1103/PhysRev.182.712
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The resistivities of condensed polycrystal and single-crystal aluminum films have been measured as a function of thickness (1600-36000) and temperature (4.2-300°K). Both the temperature-independent residual resistivity and the temperature-dependent resistivity increase with decreasing film thickness. The residual resistivity agrees very well with the Fuchs-Sondheimer theory. Both groups of films have the same bulk electron mean free path but different reflection parameters. The increase in the temperature-dependent part of the resistivity is larger but similar to the deviations predicted by the Fuchs-Sondheimer theory. © 1969 The American Physical Society.
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页码:712 / +
页数:1
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