MAZE DOMAINS IN SILICON-IRON CRYSTAL

被引:4
作者
CHIKAZUMI, S
SUZUKI, K
机构
[1] Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo
[2] Central Laboratory, Riken Piston Ring Industry Company Ltd., Kumagaya, Saitama
关键词
D O I
10.1109/TMAG.1979.1060327
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Changes of the maze domain upon application of a horizontal field and a mechanical tension were observed for 4-percent Si-Fe crystal. It was found that the value of the local internal stress obtained in a previous paper should be reduced by a factor of 0.22 by taking into account the µ* correction. The corrected value agrees with the present experiment, The maze domains induced beneath an indentation applied to a (001) crystal surface indicate the plastically stressed region which is found to be confined to a sphere touching the crystal surface as expected from the theory of elasticity. Copyright © 1979 by The lnstitutc of Electrical and Electronics Engineers, Inc.
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收藏
页码:1291 / 1295
页数:5
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