THE ELECTRON TRAP ASSOCIATED WITH AN ANION VACANCY IN ZNSE AND ZNSXSE1-X

被引:42
作者
SHIRAKAWA, Y
KUKIMOTO, H
机构
关键词
D O I
10.1016/0038-1098(80)90575-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:359 / 361
页数:3
相关论文
共 7 条
[1]   ELECTRICAL-PROPERTIES OF ZINC SELENIDE HEAT-TREATED IN CONTROLLED PARTIAL PRESSURES OF CONSTITUENT ELEMENTS [J].
IGAKI, K ;
SATOH, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) :1965-1971
[2]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[3]   OPTICAL PROPERTIES OF SUBSTITUTIONAL DONORS IN ZNSE [J].
MERZ, JL ;
SHIEVER, JW ;
NASSAU, K ;
KUKIMOTO, H .
PHYSICAL REVIEW B, 1972, 6 (02) :545-&
[4]   ELECTRON SPIN RESONANCE OF F-CENTRE IN ZNS [J].
SCHNEIDER, J ;
RAUBER, A .
SOLID STATE COMMUNICATIONS, 1967, 5 (09) :779-+
[5]  
SCHNEIDER J, 1967, SOLID STATE COMMUN, V5, P783
[6]   EPR OBSERVATION OF CLOSE FRENKEL PAIRS IN IRRADIATED ZNSE [J].
WATKINS, GD .
PHYSICAL REVIEW LETTERS, 1974, 33 (04) :223-225
[7]  
WATKINS GD, 1973, RAD DAMAGE DEFECTS S, P228