COULOMB ENERGY OF TRAPS IN SEMICONDUCTOR SPACE-CHARGE REGIONS

被引:70
作者
SCHULZ, M
机构
[1] Institut für Angewandte Physik, Universität Erlangen-Nürnberg, 91058 Erlangen
关键词
D O I
10.1063/1.354656
中图分类号
O59 [应用物理学];
学科分类号
摘要
Large Coulomb barriers exceeding DELTAE almost-equal-to 250 meV are estimated and emission rates of trap centers in semiconductor space-charge regions Depending on the charge state of the trap, the capture rate or both the capture arid emission rates are activated or deactivated, respectively. The Coulomb energy raises the equilibrium energy state of a trap center that is repulsively charged when occupied. Quantitative agreement of the calculated Coulomb energy is obtained with trapping rates for single individual interface traps in metal-oxide-semiconductor (MOS) structures measured by random telegraph signals. The Coulomb barrier is reduced in MOS capacitors by partial screening due to mobile charge carriers in the inversion channel. The Coulomb energy can be externally controlled in MOS structures by the gate bias voltage.
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页码:2649 / 2657
页数:9
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