THEORY OF DIFFUSION-PROCESSES IN IMPLANTED SILICON

被引：2

作者：

ANTONCIK, E

机构：

[1] Institute of Physics and Astronomy, University of Aarhus, Aarhus C

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90724-K

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A simple model is proposed, describing the behaviour of implanted donors/acceptors in silicon in terms of reaction-diffusion equations. In particular, enhanced transient diffusion during rapid thermal annealing is discussed in detail in connection with the various physical processes involved. Special attention is given to diffusion processes enhanced by the limited solubility of impurities.

引用

页码：998 / 1001

页数：4

共 12 条

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